advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 200v simple drive requirement r ds(on) 170m fast switching characteristic i d 3 18a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice 201412155 thermal data parameter 1 operating junction temperature range -55 to 150 storage temperature range total power dissipation 34.7 -55 to 150 drain current, v gs @ 10v 3 9.5 pulsed drain current 1 60 gate-source voltage + 20 drain current, v gs @ 10v 3 18 parameter rating drain-source voltage 200 AP18N20GI-HF halogen-free product g d s g d s to-220cfm(i) a p18n20 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 170 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =10a - 9.5 - s i dss drain-source leakage current v ds =200v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =160v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v , v ds =0v - - + 100 na q g total gate charge i d =10a - 19 30 nc q gs gate-source charge v ds =160v - 5 - nc q gd gate-drain ("miller") charge v gs =10v - 6 - nc t d(on) turn-on delay time v dd =100v - 9 - ns t r rise time i d =11a - 21 - ns t d(off) turn-off delay time r g =9.1 -25 - ns t f fall time v gs =10v - 19 - ns c iss input capacitance v gs =0v - 1065 1700 pf c oss output capacitance v ds =25v - 185 - pf c rss reverse transfer capacitance f=1.0mhz - 3 - pf r g gate resistance f=1.0mhz - 1.6 3.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 180 - ns q rr reverse recovery charge di/dt=100a/s - 1150 - nc notes: 1.pulse width limited by max junction temperature. 2.pulse test 3.ensure that the junction temperature does not exceed t jmax. . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP18N20GI-HF
a p18n20gi-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 16v 12 v 10 v 8.0v v g =6.0v 0 10 20 30 40 0.0 4.0 8.0 12.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 16v 12 v 10 v 8.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 120 140 160 180 200 220 240 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t c =25 o c
AP18N20GI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0 1 10 100 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a 1 10 100 1000 10000 1 21416181 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge 0 3 6 9 12 15 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o ct j =25 o c v ds =5v v ds = 100 v v ds = 130 v v ds = 160 v
AP18N20GI-HF marking information 5 part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 18n20gi ywwsss meet rohs requirement for low voltage mosfet only
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